* 36A, 280V, RDS(on) = 0.051Ω @VGS = 10 V
* Low gate charge ( typical 77 nC)
* Low Crss ( typical 83 pF)
* Fast switching
* 100% avalanche tested
.

TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior s.

FDAF69N25

FDAF59N30

FDAF75N28

FDA032N08

FDA0801A

FDA0802A

FDA0802D

FDA0802E

FDA1001A

FDA1004A

FDA1055

FDA117

FDA117G